Raman Scattering Study of InGaN Grown by Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates.
スポンサーリンク
概要
- 論文の詳細を見る
We have studied the asymmetric broadening of the Raman spectra of In<FONT SIZE="-1"><SUB><I>x</I></SUB></FONT>Ga<FONT SIZE="-1"><SUB>1-<I>x</I></SUB></FONT>N grown on sapphire substrates with the aid of the spatial correlation model. The asymmetric broadening of the E<FONT SIZE="-1"><SUB>2</SUB></FONT> phonon mode is enhanced in the region of immiscibility by increasing the indium molar fraction. The correlation length, which corresponds to the decay length of the E<FONT SIZE="-1"><SUB>2</SUB></FONT> phonon mode, was estimated for the first time. It was on the order of 6-10 nm, which is on the same order of magnitude as the size of the columnar structure suggested by transmission electron microscope analyses.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
- Electron Channelling Effect in an Al–Fe–Cu Quasicrystal
- Construction and Performance of a Large-Aperture Wire-Chamber Spectrometer for Pion Scattering Experiments at KEK
- Effect of Plasma Injection on Cold Wall Type MHD Generator
- Development of Scanning μ-RHEED Microscopy for Imaging Polycrystal Grain Structure in LSI
- Boundary Layer Cooling Effect on Semi-Hot Wall Type MHD Channel