The Growth Mechanism of SiC Film on a Si(111)-(7 * 7) Surface by C60 Precursor Studied by Photoelectron Spectroscopy.
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We have investigated the growth mechanism of SiC film by the thermal reaction of C<FONT SIZE="-1"><SUB>60</SUB></FONT> molecules adsorbed on a Si(111)-(7×7) surface using photoelectron spectroscopy. The growth of SiC film, performed by repeating the sample annealing at 1370 K following the adsorption of C<FONT SIZE="-1"><SUB>60</SUB></FONT> molecules, is confirmed by the profile of the valence spectrum. The bonding nature between C<FONT SIZE="-1"><SUB>60</SUB></FONT> molecules and the SiC surface is considered to have a covalent character at 300 and 670 K, and both covalent and ionic characters at 870 K by the thermal-dependent valence and C 1s core level spectra of a 1 monolayer C<FONT SIZE="-1"><SUB>60</SUB></FONT> film adsorbed on SiC. Furthermore, we determined that the breaking of the C<FONT SIZE="-1"><SUB>60</SUB></FONT> cage and the formation of SiC occurred at 1070 K, i.e. at a temperature 100 K lower than that on a Si(111) surface.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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