Structural and Ferroelectric Properties of Sol-Gel Deposited Nb-doped Pb((Sc1/2Nb1/2)0.57Ti0.43)O3 Thin Films.
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Ferroelectric 0.5 mol% Nb-doped Pb[(Sc<SUB>1/2</SUB>Nb<SUB>1/2</SUB>)<SUB>0.57</SUB>Ti<SUB>0.43</SUB>]O<SUB>3</SUB> (PSNTN) thin films were successfully prepared by a sol-gel method. The optimal annealing temperature for the crystallization of the films was determined by differential thermal analysis (DTA). The degree of crystallinity for the films as a function of annealing temperature and thickness was characterized by the using X-ray diffraction technique. The Curie temperature of the film was 212<SUP>°</SUP>C, which is lower than 248<SUP>°</SUP>C for bulk PSNTN ceramics. Typical P--E hysteresis was observed in all films annealed above 600<SUP>°</SUP>C. The remanent polarization and the coercive field of the 0.4-µm-thick film annealed at 700<SUP>°</SUP>C were 21 µC/cm<SUP>2</SUP> and 32 kV/cm, respectively. Both the effect of annealing temperature on the top electrode and the effect of polarity on the ferroelectric properties of the PSNTN were investigated. Better insulating properties of the films on Pt/Ti, compared to those of the films on Pt/TiO<SUB>2</SUB>, are observed.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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