Bulk Boundary Condition for Numerical Solution of Simultaneous Diffusion Equations of Phosphorus and Point Defects in Silicon.
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概要
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The bulk boundary condition for the numerical solution of the phosphorus diffusion equation in silicon, which is based on the pair diffusion model of the vacancy mechanism, is studied. The zero concentration-gradient condition of vacancy at a region more than two times deeper than the phosphorus diffusion depth can be used in place of the equilibrium concentration condition of vacancy at x=∞. The zero concentration-gradient condition is applicable to diffusion equations based on the pair diffusion models of vacancy and interstitialcy mechanisms.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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