Contact Structure for a Superconducting Field Effect Transistor Using SrTiO3/YBa2Cu3O7-x Films.
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A contact structure for a superconducting field effect transistor (SuFET) was developed using a sequentially-deposited SrTiO<SUB>3</SUB> (STO)/YBa<SUB>2</SUB>Cu<SUB>3</SUB>O<SUB>7-x</SUB> (YBCO) bilayer. A buried contact structure was proposed to contact the edge of the ultrathin YBCO layer of the STO/YBCO bilayer, which was used as a channel layer of a SuFET. To reduce the contact resistance, focused ion beam (FIB) etching of the bilayer and in situ noble metal deposition were adopted. Specific contact resistance was reduced to 5× 10<SUP>-8</SUP> Ω cm<SUP>2</SUP> for a 30-nm-thick YBCO film without annealing. Furthermore, annealing in ozone caused a reduction of specific contact resistance to 3× 10<SUP>-8</SUP> Ω cm<SUP>2</SUP> for a 20-nm-thick YBCO film. This structure is useful to shrink the device dimensions and to improve the modulation characteristics of a SuFET.
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公益社団法人 応用物理学会 | 論文
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