Structure Analysis of A-Si1-xCx:H with Dominant Tetrahedral Si-C Bonds Deposited by Hybrid-Plasma Chemical Vapor Deposition.
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Hydrogenated amorphous silicon-carbon (a-Si<SUB>1-x</SUB>C<SUB>x</SUB>:H) was deposited by a new deposition method of hybrid-plasma chemical vapor deposition. In this method, pre-cracked CH<SUB>4</SUB> by a microwave plasma is introduced into a chamber where SiH<SUB>4</SUB> is decomposed by a radio-frequency plasma. A-Si<SUB>1-x</SUB>C<SUB>x</SUB>:H films deposited by this method show high photoconductivity in the optical-bandgap range from 2.0 to 2.3 eV. The bonding structures in the films deposited by hybrid-plasma CVD were analyzed using Fourier transform infrared absorption and X-ray photoelectron spectroscopy. The films deposited with the microwave plasma contain 1.6-3 times larger tetrahedral Si-C bonds than graphitic C-C bonds, for the same carbon content. Decomposition of CH<SUB>4</SUB> by the microwave plasma leads to a change of the main precursors for the vapor and/or surface reaction, and it is a promising process for obtaining a-Si<SUB>1-x</SUB>C<SUB>x</SUB>:H with high-performance photoelectric properties resulting from the dominant tetrahedral bonds.
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公益社団法人 応用物理学会 | 論文
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