Vanishing of Negative Differential Resistance Region due to Electric Field Screening in Wannier-Stark Localization Type Self-Electro-Optic Effect Devices.
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We report absorption saturation behaviors of the photocurrent versus reverse bias voltage characteristics (i-V characteristics) under high intensity optical pulse excitation in short-period GaAs/AlAs superlattices. While a negative differential resistance (NDR) region in the i-V curve normally appeared due to the Wannier-Stark localization effect under low intensity excitation, vanishing of the NDR was observed under high excitation. Simultaneously, an anomalously stretched photocurrent tail and long-lived photoluminescence were observed. These phenomena are clearly explained by electric field screening caused by remaining photogenerated holes in the superlattice region. Simulation results of carrier transport in thin-barrier superlattices using one-dimensional Green's function for the electric potential explain well the experimental results.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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