Influence of Type-I to Type-II Transition by an Applied Electric Field on Photoluminescence and Carrier Transport in GaAs/AlAs Type-I Short-Period Superlattices.
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We have investigated the influence of type-I to type-II transition by an applied electric field on photoluminescence and carrier transport by time-of-flight experiments in GaAs/AlAs short-period superlattices. Type-I to type-II transition was confirmed by observing degenerated photoluminescence spectra caused by Γ-X mixing. The rise time of the time-resolved photocurrent was found to increase by the type-I to type-II transition. This result clearly shows that the tunneling time through type-II alignment is longer than that through type-I alignment. The delayed carrier transport is most likely caused by Γ-X-Γ transfer. The results suggest that in type-II superlattices, carriers prefer Γ-X-Γ transfer to Γ-Γ sequential tunneling.
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公益社団法人 応用物理学会 | 論文
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