Analysis of Misoriented Crystal Structure by Ion Channeling Observed Using Ion-Induced Secondary Electrons.
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Channeling measurements using secondary electrons induced by MeV ions such as 2 MeV H<SUP>+</SUP> and 3.5 MeV/u O<SUP>8+</SUP> were carried out to investigate the lattice disorder in Ni and epitaxially grown CeO<SUB>2</SUB> crystals, which was hardly detected by backscattering spectroscopy with MeV ions. The keV electron yield under channeling incidence conditions sensitively reflects the degree of misorientation of atomic rows with a mean deviation angle on the order of 0.1<SUP>°</SUP>. The measurements for a small critical angle for channeling is extremely useful for analysis of a ten-nanometer-thick surface layer containing a strained lattice.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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