Deposition and Electrical Characterization of Very Thin SrTiO3 Films for Ultra Large Scale Integrated Dynamic Random Access Memory Application.
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SrTiO<SUB>3</SUB> thin films are deposited on Pt/SiO<SUB>2</SUB>/Si substrates using RF magnetron sputtering in a temperature range from 200<SUP>°</SUP> C to 600<SUP>°</SUP> C. The film deposited at 600<SUP>°</SUP> C shows the best dielectric property and leakage current characteristics due to its good crystallinity and stoichiometric composition. Dielectric constant of the film deposited at 600<SUP>°</SUP> C decreases with decreasing thickness from 235 at 120 nm to 145 at 30 nm. Leakage current shows a constant value of about 30 nA/cm<SUP>2</SUP> at 1.6 V in a thickness range from 50 nm to 120 nm but increases rapidly to 5 µ A/cm<SUP>2</SUP> at 30 nm. The electrical properties of the films are explained by a model of the Pt/SrTiO<SUP>3</SUP>/Pt capacitor based on the band structure.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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