The Noise Reduction Effect of the Amplified Metal Oxide Semiconductor Imager.
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概要
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It is predicted that the amplified metal oxide semiconductor imager (AMI) exhibits carrier movements between adjacent pixels. Consequently, it is considered that a spurious resolution reduction effect or a random noise reduction effect occurs. The authors have clarified these phenomena theoretically and have measured the sensitivity characteristic between pixels and the random noise using devices. As a result, carrier movements below 5% between adjacent pixels were clearly observed, and it was confirmed that 0.89-times random noise reduction already occurred at an intensity of incidence of 1/1000 of saturation, and 0.79-times reduction at intensity of 1/100 of saturation.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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