Negative Tone Dry Development of Si-Containing Resists by Laser Ablation.
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概要
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A new negative tone dry development process is proposed. This process consists of area selective oxidation of a Si-containing layer with soft X-ray exposure and removal of the unoxidized areas by KrF laser ablation. Polysilane and Si-containing polystyrene have been investigated as resist polymers. Laser ablation rates of the polymers have been measured. The unexposed areas of a polysilane film have a high ablation rate while exposed areas cannot be ablated. Measurement done in air, O<SUB>2</SUB>-, and N<SUB>2</SUB>-gas atmospheres show that oxidation of Si atoms suppresses ablation. A bilayer resist using a polysilane film as a surface-imaging layer has been patterned using this dry development process and 0.4-µ m patterns have been replicated. This dry process has the potential to be used in sub-half micrometer lithography.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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