The Study of Ultrathin Tantalum Oxide Films before and after Annealing with X-Ray Photoelectron Spectroscopy.
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The effects of post-deposition annealing on the microstructure of tantalum oxide ( Ta<SUB>2</SUB>O<SUB>5</SUB>) deposited on Si are evaluated by means of X-ray photoelectron spectroscopy. With the peak decomposition technique and the angle-resolved X-ray photoelectron spectroscopy (ARXPS) method we found that there is SiO<SUB>2</SUB> layer and Ta suboxide at the interface. By using a simple two-layer model, the thickness of both the Ta<SUB>2</SUB>O<SUB>5</SUB> layer and the interfacial SiO<SUB>2</SUB> layer could be evaluated. Investigating Ta<SUB>2</SUB>O<SUB>5</SUB> films this way before and after annealing revealed that annealing has the following effects on the interfacial reaction. With post-deposition annealing under O<SUB>2</SUB>, Ar, or N<SUB>2</SUB> gas, the Si substrate is oxidized by oxygen from the Ta<SUB>2</SUB>O<SUB>5</SUB> layer. The Ta<SUB>2</SUB>O<SUB>5</SUB> is partly reduced and N<SUB>2</SUB> gas activates this reaction. The thickness of the interfacial SiO<SUB>2</SUB> layer is reduced by nitridation of the Si substrate.
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公益社団法人 応用物理学会 | 論文
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