Interfacial Defects Related to the Substrate. Treatment in Molecular Beam Epitaxial Silicon.
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概要
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Interfacial defects related to the residual carbon on the hydrogenterminated Si(100) surface have been studied using the deep-level transient spectroscopy (DLTS) technique. The defect level is found to be donorlike which compensates the acceptor impurity at the interface. With a fast load-in and a two-step annealing, the defect density can be suppressed below the DLTS detection limit of 10<SUP>12</SUP> cm<SUP>-3</SUP>.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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