0.13 .MU.m Pattern Delineation Using KrF Excimer Laser Light.

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概要

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• This paper investigates the resolution limit of KrF excimer laser lithography using phase-shifting mask (PSM) technology by simulation and experiment. An improved phase-shifting mask structure combined with a newly developed crosslinking type negative-tone resist on a reflection-suppressed trilayer resist makes it possible to delineate minimum pattern size of 0.13 µm with sufficient depth of focus, using a high-NA lens system under high coherent light. These results show that KrF excimer laser lithography applying PSM technology is a good candidate for gigabit-level ULSI fabrication by lithography.

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公益社団法人 応用物理学会 | 論文

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