軟Ｘ線吸収発光分光法によるＳｉＯ２／Ｓｉ界面電子状態のサイト選択的観測
スポンサーリンク
概要
- 論文の詳細を見る
Understanding the SiO2/Si interface on atomic level is an important subject for fabricating silicon based superior devices. However, despite of many studies on the SiO2/Si interface, the interfacial electronic states have been evaluated as the average, but not specifically with individual states. In the present study, we successfully observed the electronic states of particular atoms at the SiO2/Si interface for the first time, using soft X-ray absorption and emission spectroscopy. The interfacial states are noticeably different from those of the bulk SiO2 and strongly depend on the intermediate oxidation states at the interface. Furthermore, comparing the experimental results to theoretical calculations reveals the local interfacial structures.
- 公益社団法人 日本表面科学会の論文
公益社団法人 日本表面科学会 | 論文
- An XPS Analysis of the Interfacial Interaction between Oxides and Epoxy Resin.
- A Structure Analysis of Langmuir-Blodgett Magnetic Films by X-ray Diffraction.
- Structure and Reactivity of Surface Compounds Formed on Single Crystal Metal Surfaces During Catalytic Reactions.
- Atomic-Layer Etching of Si by Low Energy Ion Irradiation.
- Microstructure Observations of (Nd, Ce)2CuO4 Superconducting Thin Films by Using Cross-Sectional HRTEM and the Mechanism f Film Growth.