格子不整合系におけるエピタキシー Ｓｉ／ＳｉＯ２界面形成における歪みの役割
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When the Si/SiO2 interface is formed by thermal oxidation of Si, quite a large strain is induced by the volume expansion from Si to SiO2 (approximately 2.25 times). This strain should have a great effect on the formation of the Si/SiO2 interface. Here, we review our recent theoretical studies of the strain effect on the atomical flatness and electrical properties of the interface by using the first-principles calculation method. We also show that the Si emission at the interface is an important mechanism for releasing the strain.
- 公益社団法人 日本表面科学会の論文
公益社団法人 日本表面科学会 | 論文
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