イオンビームスパッタ法における反跳Ａｒの鉄薄膜特性に及ぼす影響
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概要
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Fe films were deposited by ion beam sputtering. The sputtering voltage VS was set to 1200 V. The angle θS between the normal line of the target plane and the normal line of the substrate plane was varied in the range of 10 - 80°. The θS dependence of the properties of the Fe films and the average energy of the energetic particles, namely the sputtered atoms and the recoiled Ar ions were investigated in detail.<BR>The saturation magnetization 4πMS of the films had an almost constant value of 21 kG. The coercivity HC took a minimum value of 3 Oe when θS was higher than 50°. It was estimated by Monte Carlo simulation that the average energy EAr of the recoiled Ar ions was approximately 300 eV when θS was 50°. Bombardment with high-energy recoiled Ar ions improved the structure of the films and significantly reduced their coercivity. The angle of the substrate was an important parameter for the properties of films deposited by ion beam sputtering.
- 社団法人 日本磁気学会の論文
社団法人 日本磁気学会 | 論文
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