Co-γFe2O3/NiO Thin Film Disks fabricated by Plasma Oxidization

概要

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In the fabrication process of Co-γFe2O3/NiO thin film recording disks, new oxidization method using oxygen ions in a plasma was proposed to transform a CoO-Fe3O4 film to a Co-γFe2O3 film. Remarkably effective oxidization was achieved by utilizing oxygen ions produced in an electron-cyclotron-resonance microwave plasma, promotion of oxygen ion generation by Penning ionization effect using metastable He atoms, and neutralization for preventing static electricity of samples. This plasma oxidization method shortened the oxidization processing time to 10 seconds and lowered the process temperature to 150 °C for the 20nm thick CoO-Fe3O4 films. Almost same recording characteristics was obtained between the Co-γFe2O3/NiO disks prepared by the plasma oxidization method and a conventional heat oxidization method in air.
社団法人日本磁気学会の論文