ブロッホラインメモリの基本動作

概要

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A primary operation of Bloch Line (BL) memory chips has been demonstrated with improvements of write and read functions. A novel write gate using a simple sequence has been proposed. Four BL's generated by the write current are converted into one stable BL pair, collapsing two BL's by Bloch point nucleation. The stable BL pair has been generated in the write current range of 110-130 mA (17% margin) under the in-plane field of 3 Oe. For a read gate, BL separation by a local in-plane field realizes a discrimination between a σ or χ stripe by chopping a stripe head. A σ stripe head can be chopped into a bubble in the read current range of 148-185 mA (22% margin) under the in-plane field of 3 Oe. With these functions connecting to a current-access propagation track, the shift register operation has demonstrated the possibility of BL memory devices.
社団法人日本磁気学会の論文