イオンビーム照射を併用した窒化Ｃｏ蒸着薄膜の形成

概要

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The formation of cobalt-nitride thin films by the ion reacting deposition method was investigated. A low energy broad-beam ion source (Kaufman type) was used for ionizing nitrogen. From the X-ray diffraction spectra, it was found that the N-rich cobalt-nitrides, Co3N and Co2N, were formed only under the deposition condition of low ion current density. The magnetic properties of the films changed suddenly with increasing Jion. Hc took a maximum value at Jion=1.5 (mA/m2)/(Å/s), above which the N-poor composition, Co4N, was formed. The nitrogen, which was contained in the films but did not take part in the nitriding reaction, was degassed above 250°C
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