低温基板上Ｃｏ‐Ｃｒスパッタ膜の磁気特性及び磁化過程

概要

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Co-Cr films were prepared on polyimide substrates with temperatures of Ts=27°C and Ts > 150°C by rf sputtering method with application of a magnetic field Ha up to 41 Oe normal to substrates and/or a negative bias voltage VB up to 150 V at substrates. The films of Ts=27°C have good orientation of c-axis (Δθ50=3.2°) and show magnetization values near those of the bulk materials. In these films, we were able to obtain reentrant perpendicular hysteresis loops having low coercivity Hc (⊥) and sharp shoulder, and could observe stripe domains with a width of about 0.3μm and also the clear wall motion by the Bitter method. The application of Ha induces a change in Cr-content, saturation magnetization Ms and perpendicular anisotropy Ku. The c-axis orientation is improved by applying VB up to 50 V and the value of Δθ50 becomes larger. In films of Ts=150°C, the values of Ms, Ku and Hc (⊥) are higher and c-axis orientation is worse than in films of Ts=27°C.
社団法人日本磁気学会の論文