Hydrogenation and Dehydrogenation Properties of [AlN-Pd]/Y and [AlOx-Pd]/[AlN-Pd]/Y Films
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We report hydrogenation and dehydrogenation properties of the [AlN-Pd]/Y and [AlOx-Pd]/[AlN-Pd]/Y films. The [AlN-Pd] and [AlOx-Pd]/[AlN-Pd] composite cap layers were deposited on yttrium layers by a rf-magnetron sputtering method. The cap layers were used to protect the Y layers from oxidation. Electrical resistivity of the films was measured during a few cycles of hydrogen loading and unloading in order to monitor the hydrogenation and dehydrogenation of the Y layers. As repeating the cycles, the amplitude of resistivity change was gradually reduced for the [AlOx-Pd]/[AlN-Pd]/Y film. On the other hand, the [AlOx-Pd]/[AlN-Pd] protective layer showed much better stability against the high temperature steam than the [AlN-Pd] layer.
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The Japan Institute of Metals and Materials | 論文
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