Influence of thermal oxide layer on the growth and structure of barrier anodic films on aluminum.
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Electropolished 99.99% aluminum sheets were heat treated in air at 500°C for 15min and subsequently anodized in 0.1M ammonium pentaborate solution at 25°C with a constant current density of 50A/m2. Transmission electron microscopy of the stripped anodic films has shown that the films consist of both amorphous and crystalline γ'-alumina. The crystalline γ'-alumina occurs as discrete islands of approximately circular shape when viewed in plan. The diameter of the crystalline islands increases linearly with increasing forming voltage, starting from about 35V. Transmission electron microscopy of ultramicrotomed sections of the anodic films has shown that the crystalline islands take the form of approximately convex lens shape in section and are located near the middle of the barrier oxide layer embedded within amorphous film material. The growth of crystalline γ'-alumina can be explained reasonably if it is assumed that the thermal oxide layer contains tiny crystallites of γ-alumina that serve as effective nucleation sites for the growth of γ'-alumina.
- 一般社団法人 軽金属学会の論文
一般社団法人 軽金属学会 | 論文
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