The Damage of Geranium Exposed to Boron Compounds in the Atmosphere by the Exposure Chamber

概要

論文の詳細を見る
A generation apparatus of volatile boron compounds was constructed, and the produced boron was introduced into a plant exposure chamber in order to examine plant damage caused by the exposure. The apparatus produced volatile boron at concentrations of 1.3mg/m3-2.7mg/m3 for several hours at temperature of 40-100°C. After the exposure experiment, tips and peripheral regions of Geranium leaves were damaged similarly to the damaged plants observed at an event in Toyama prefecture in 2001. The concentration of boron in the leaves ranged between 160 to 5, 000μg/g, increasing nearly proportionally to the square of exposure days. Boron concentrations in tips /peripherals of exposed leaves were found to be 1.2-3.6 times higher than those in central parts of exposed leaves, and 2.2-45 time higher than those in tips/peripherals of unexposed leaves. Lowest adverse effect levels as boron concentrations in damaged leaves were not clarified. From the above results, the mechanism of plant damage observed in Toyama prefecture was estimated to be produced by volatile boron compounds which were adsorbed through stomata and accumulated in tips/peripheral regions of leaves.
日本環境化学会の論文