Tin-Gold Contacts for Planar Bulk GaAs Devices

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概要

• 論文の詳細を見る

• A new tin-gold technique has been used to apply planar ohmic contacts to <I>n</I>-type GaAs in order to develop planar bulk GaAs oscillators. The contacts have shown ohmic contact characteristics and provided sufficient mechanical strength for device fabrication. However, the characteristics of the planar devices studied were considerably different from those of conventional sandwich devices. Average threshold fields for spontaneous oscillations were as high as 13,600 V/cm instead of about 300 V/cm for sandwich devices.<BR>This paper describes a method of preparation of the contact and presents some preliminary characteristics of planar devices. Nonuniform field effects are briefly discussed to explain the characteristics of planar devices. Some recommendations are given of improving device characteristics.

• 社団法人 日本物理学会の論文

著者

• Takao Iwao

  Research Institute of Electronics, Shizuoka University, 3-5-1, Johoku, Hamamatsu

• Hayashi Toshiya

  Bell Telephone Laboratories, Incorporated, Murray, Hill, N. J., U. S. A.

• Uenohara Michiyuki

  Bell Telephone Laboratories, Incorporated, Murray, Hill, N. J., U. S. A.

関連論文

• Inhomogeneity Effects on the Oscillation Characteristics of "Long" Gunn Effect Devices
• Tin-Gold Contacts for Planar Bulk GaAs Devices
• Tin-Gold Contacts for Planar Bulk GaAs Devices

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