Fabrication of non-equilibrium Si: Te and Si: Zn Systems with extremely high impurity concentration by means of laser annealing.
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We have investigated non-equilibrium Si with extremely high impurity concentration of Te and Zn fabricated by means of pulsed-laser annealing and ion implantation. It was found that there exists a significant difference of segregation and lattice between II (Zn)-and VI (Te)-colum atoms after laser annealing. It was possible to dope subsititutional Te impurity up to some 5×10<SUP>20</SUP>/cm<SUP>3</SUP> and fabricate the non-equilibrium Si: Te system with n-type conduction.
- 社団法人 レーザー学会の論文
社団法人 レーザー学会 | 論文
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