Terraced Substrate GaAs-(GaAl) As Lasers
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概要
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A new structure of stripe-geometry lasers is proposed where a double heterostructure is fabricated on a terraced substrate. The lasing mode is confined and stabilized in the narrow area between two adjacent bends of the active layer. No kinks have been observed in light output-current characteristcs. The terraced substrate laser exhibits a stable single longitudinal mode oscillation as well as a fundamental transverse mode oscillation. Beam divergences of far-field pattern in the direction parallel and perpendicular to the junction plane are 20° and 34°, respectively.
- 社団法人 レーザー学会の論文
社団法人 レーザー学会 | 論文
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