Bismuth Based Erbium Doped Fiber for WDM Amplifiers.
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概要
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We fabricated bismuth based erbium doped fiber (Bi-EDF) with Er concentration of 6, 500 ppm andevaluated amplifying performance. A net gain of 18 dB was achieved at 1560 nm using only 22 cm-long Bi-EDF. And we can also obtain more than 9 dB gain in C+L band using this fiber. The maximum saturation output power at the wavelength from 1530 to 1610 nm was estimated to be approximately 13 dBm. Moreover, Bi-EDF can be fusion spliced to SiO<SUB>2</SUB> fiber using a conventional splicing machine.
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社団法人 レーザー学会 | 論文
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