Development of Source System for EUV Lithography.
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概要
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Laser-produced plasma EUV source for EUV lithography has been developed. Intensity of 13.5 nm EUV andamount of debris from irradiated various targets with pulsed YAG laser (1J, 7ns) were estimated. 0.02-0.2μJ/cm<SUP>2</SUP>/pulse of 13.5 nm EUV at x-ray CCD-camera equipped with the spectrometer for Cu-tape target. Si<SUB>3</SUB>N<SUB>4</SUB>filter had kept more than 60% transmission for EUV within 100, 000 laser shots. 2 hour exposureof 13.5nm EUV on EUVL resist (SAL601) were demonstrated.
- 社団法人 レーザー学会の論文
社団法人 レーザー学会 | 論文
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