Ecologically Friendly Metal-Silicide Semiconductor Reserch. Synthesis of .BETA.-FeSi2/n-Si Heterojunction and Its Photovoltaic Property.
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We have succeeded in synthesis of continuous polycrystalline β-FeSi<SUB>2</SUB> with large grains on n-type Si (001) substrates using a triple implantation of <SUP>56</SUP>Fe<SUP>+</SUP> ion at room temperature (RT). The RT ion-implantation caninduce a large number of defect to the Si surface, so that β-FeSi<SUB>2</SUB> growth can be acceleratedby radiationenhanced diffusion of Fe and Si atoms. The synthesised β-FeSi<SUB>2</SUB> showed a clear junction with Si (001). Weobserved its p-type semiconduction and a large hole mobility of 440 cm<SUP>2</SUP>/Vs at 280 K. Pronounced photoluminescenceat 0.80 eV was observed at 10 K. The heterojunction showed good photovoltaic spectral responsesto near band-gap light of 1.55μm. These suggest that β-FeSi<SUB>2</SUB> is one of promising Si-based semiconductors for IR photodetectors. We confirmed that the ion-beam synthesised p-n heterojunction can work sufficiently as an IR photodetector at RT.
- 社団法人 レーザー学会の論文
社団法人 レーザー学会 | 論文
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