Blue Semiconductor Lasers. Mechanism of Stimulated Emission in GaN and Effect of Alloying.
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概要
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Mechanism of stimulated emission from binary GaN films have been elucidated. Structural properties of ternary GaInN single layer and GaInN/GaN multiple quantum well have been characterized using high-resolution x-ray diffraction in detail. It was found that the intrinsic piezoelectric field affects seriously on the stimulated emission properties of GaInN-based MQWs.
- 社団法人 レーザー学会の論文
社団法人 レーザー学会 | 論文
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