Effects of High-power Argon Excimer Laser Irradiation on Polycrystalline Silicon Carbide Mirrors.
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概要
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The effects of an argon excimer laser irradiation are studied on silicon carbide films which are deposited on sintered and pressed silicon carbide substrates by a low-pressure chemical vapor deposition (CVD) method. The SiC films consist of about 15μm size crystallites highly oriented in such a way that the surfaces are parallel to (110). X-ray photoelectron and Raman scattering spectroscopic examination show that amorphous silicon is precipitated in the surface layers of silicon carbide films by the laser irradiation. The precipitation mechanism is discussed.
- 社団法人 レーザー学会の論文
社団法人 レーザー学会 | 論文
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