Laser Solid Phase Epitaxial Growth of Amorphous GaAs.
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概要
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We have found recently that there are optimum values of laser irradiation time and spot size for laser Solid Phase Epitaxial (SPE) growth of GaAs. The amorphous GaAs layers with a thick-ness of 600 @/Ar35@/ used in the study were produced by P<SUP>+</SUP> ion implantation. Both 1.7W Ar ion laser and 4W Kr ion laser irradiations were used. The optimum values for SPE of the time and spot diameter were 67ms and 1 μm for the Ar ion laser and 17ms and 10 μm for the Kr laser. The 1 μm spot diameter is the smallest ever reported. For the Kr ion laser irradiation under these conditions, the speed of the laser SPE growth was as high as 30 μm/sec and the tempera-ture was as low as 560°C. The quality of the laser SPE growth layers was evaluated by the peak heights of the LO phonon Raman lines.
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社団法人 レーザー学会 | 論文
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