Measurement of Si Atoms in RF Silane Plasma by Absorption Spectroscopy using a Ring Dye Laser.
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概要
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The absorption profile of the Si 288.2 nm line (3p<SUP>2</SUP> <SUP>1</SUP>D2-3p4s <SUP>1</SUP>P<SUB>1</SUB>) in a cw-RF SiH<SUB>4</SUB> (10%) /Ar plasma generated in a plasma CVD chamber was determined by absorption spectroscopy using a ring dye laser. The Si atom density at the 3p<SUP>2</SUP> <SUP>1</SUP>D<SUB>2</SUB> level and the Si translational temperature were measured as functions of input power and total pressure in the cw-RF SiH<SUB>4</SUB> (10%) /Ar plasma.
- 社団法人 レーザー学会の論文
社団法人 レーザー学会 | 論文
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