Synchrotron Radiation Excited Semiconductor Processes.
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概要
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An outline of a synchrotron radiation (SR) excited reaction is given in connection with silicon epitaxy and related surface processes. Experimental results on SR-excited silicon epitaxial growth and surface cleaning using a disilane molecular beam system are presented. Epitaxial growth was attained at a surface temperature as low as 380°C. It is concluded that the growth rate in the low temperature region is limited by hydrogen desorption from the surface due to SR irradiation. The surface cleaning was realized at a surface temperature of 700°C mainly by an SR excited reductive reaction of the silicon surface oxide by disilane molecules.
- 社団法人 レーザー学会の論文
社団法人 レーザー学会 | 論文
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