Crystal structure of AlGaInP for visible semiconductor lasers and device characteristics.
スポンサーリンク
概要
- 論文の詳細を見る
The characteristic crystal structure (natural superlattice) of AlGaInP grown by metal-organic vapor phase epitaxy (MOVPE) for the use of visible semiconductor lasers, material depends on the growth conditions. This paper descibes the dependence of the crystal structure and the effect on the device characteristics and device designing. In this connection, short wavelength laser operation and a novel laser structure for high power operation are also described (briefly).
- 社団法人 レーザー学会の論文
社団法人 レーザー学会 | 論文
- Possible Isotope Separation by a Process of Nuclear Excitation by Electron Transition
- Integrated Optic Flow Meter with Cantilever Structure on Silicon Substrate.
- タイトル無し
- Application of Tunable Vacuum-Ultraviolet Laser to Chemical Reaction Dynamics.
- タイトル無し