Laser doping.
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概要
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Doping processes into semiconductors by excimer and Ar ion lasers are reviewed. Doping characteristics and mechanism inherently depend on the choice of laser and doping gas. Characteristics of two kinds of doping, doping from photochemical decomposition of gas and doping from adsorbed layers, are described. Calculation of doping profiles is performed with the involvement of melt depth and impurity diffusion.
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社団法人 レーザー学会 | 論文
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