Semiconductor laser embedded with highly resistive layers. The embedding growth of highly resistive epitaxial layers by MOVPE.:The Embedding Growth of Highly Resistive Epitaxial Layers by MOVPE
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The epitaxial growth and the selective growth technologies of Fe doped highly resistive InP layers by MOVPE are discussed. As an application, a planner-embedded InGaAsP/InP heterostructure laser with a semi-insulating InP current-blocking layer is demonstrated.
- 社団法人 レーザー学会の論文
社団法人 レーザー学会 | 論文
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