InGaAlP visible semiconductor lasers.
スポンサーリンク
概要
- 論文の詳細を見る
Recent progress in InGaAIP visible semiconductor lasers is reviewed based, on our results. Since the realization of CW operation of InGaAIP visible semiconductor lasers at room temperature in 1985, a number of improvements have been attained. InGaAIP materials have been confirmed as the key material for the laser diodes in the 0.6μm wavelength region. In gain-guiding structure of InGaAIP laser diodes, high temperature CW operation up to 90°C and low threshold current below 80mA have been obtained with by the optimized laser structure. More than 100 thousand hour stable operation has been expected from accelerating aging tests. In relatively low power operation less than 5mW, the InGaAIP gain-guiding visible lasers are now in the level usable to practical applications. In index-guiding structure, the laser performances, such as the low threshold current, high power operation, reliability and shorter wavelength operation, are discussed.
- 社団法人 レーザー学会の論文
社団法人 レーザー学会 | 論文
- Possible Isotope Separation by a Process of Nuclear Excitation by Electron Transition
- Integrated Optic Flow Meter with Cantilever Structure on Silicon Substrate.
- タイトル無し
- Application of Tunable Vacuum-Ultraviolet Laser to Chemical Reaction Dynamics.
- タイトル無し