Leakage Current in p-Substrate 1.3μm InGaAsP/InP:Buried Crescent (PBC) Lasers
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概要
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Leakage current in p-substrate 1.3 μm InGaAsP/InP Buried Crescent (PBC) lasers has been examinedcompared with n-substrate Buried Crescent (BC) lasers. It has been found that the value of the leakage currentcan be estimated by d<I>V</I>/d<I>I-I</I> (differential resistance vs. current) curve above threshold. The leakage current intypical PBC laser is about one order of magnitude smaller than that in BC laser, in which the leakage currentbecomes a few 10 mA at high temperature (70-80°C) and degrades remarkably the P-I (light output power vs.current) characteristics. In order to achieve excellent characteristics at high temperature and high power levels, it is important to minimize the current flowing into p-blocking layer adjacent to the active region.
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社団法人 レーザー学会 | 論文
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