Kinetics of Oxygen Surfactant in Cu(001) Homoepitaxial Growth.
スポンサーリンク
概要
- 論文の詳細を見る
O atoms segregate to the surface during Cu homoepitaxial growth on Cu(001)-(2√2×√2)-O to retain the (2√2×√2) surface. The presence of adsorbed O atoms on the Cu surface suppresses the surface diffusivity of Cu adatom and the growth proceeds by site-exchange between Cu adatoms and adsorbed O atoms, which heightens the transition temperature of the growth mode from step-flow to layer-by-layer. There exists a critical Cu deposition rate above which the O atoms can not exchange the site with Cu adatoms. The critical Cu deposition rate obeys an Arrhenius relation and the activation energy for the site-exchange is estimated at 0.66eV.
- 公益社団法人 日本表面科学会の論文
公益社団法人 日本表面科学会 | 論文
- An XPS Analysis of the Interfacial Interaction between Oxides and Epoxy Resin.
- A Structure Analysis of Langmuir-Blodgett Magnetic Films by X-ray Diffraction.
- Structure and Reactivity of Surface Compounds Formed on Single Crystal Metal Surfaces During Catalytic Reactions.
- Atomic-Layer Etching of Si by Low Energy Ion Irradiation.
- Microstructure Observations of (Nd, Ce)2CuO4 Superconducting Thin Films by Using Cross-Sectional HRTEM and the Mechanism f Film Growth.