Dynamic Behavior of Surface Atoms on Si(001) and Ge(001) Observed by Variable Temperature STM.
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Dynamic behavior of surface atoms on Si(001) and Ge(001) was investigated by a Variable-Temperature (VT) STM. In a range of sample temperature from 30 K to 1200 K, a variety of dynamical atomic-processes were observed on the surfaces. (1) The flip-flop motion of buckled dimers was detected on Ge(001) surface at room temperature (RT). (2) The structural phase-transition from 2×1 to c(4×2) was observed both on Si(001) and Ge(001) surfaces upon cooling from RT. (3) The detachment and attachment of dimers at step edges were observed at high temperatures on Si(001) and Ge(001) surfaces. It is emphasized that time dependent VT-STM will provide fruitful information concerning the dynamic processes of surface atoms with atomic resolution.
- 公益社団法人 日本表面科学会の論文
公益社団法人 日本表面科学会 | 論文
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