Thermal Relaxation of Lattice Disorder in Graphite under Ion Irradiation.
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Real-time Raman scattering measurements are performed during and after 3keV-He<SUP>+</SUP> irradiation at sample temperature from room temperature to 573 K. The time dependence of relative intensity of the disorder-induced peak with respect to the original Raman active E<SUB>2g2</SUB> mode peak shows that thermal relaxation of defects created by irradiation. Fast and slow processes exist in the thermal relaxation, the corresponding activation energies being 0.89±0.10 eV and 1.8±0.3 eV respectively.
- 公益社団法人 日本表面科学会の論文
公益社団法人 日本表面科学会 | 論文
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