Photoelectrochemical Deposition of Iridium Oxide Thin Films.
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概要
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When TiO<SUB>2</SUB> semiconductor electrode was irradiated in electrolytic solution containing Ir<SUB>2</SUB> (SO<SUB>4</SUB>)<SUB>3</SUB>, a thin film of iridium oxide was selectively formed at the irradiated region. Property of the deposited films was examined by XPS, SEM and electrochemical measurement. It was concluded that the deposition of the iridium oxide was caused by electrochemical oxidation by means of photoexited holes of the n-type semiconductor electrode.
- 公益社団法人 日本表面科学会の論文
公益社団法人 日本表面科学会 | 論文
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