光起電圧法による半導体ウエーハの比抵抗分布測定
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概要
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In this paper, a nondestructive technique to measure the resistivity variation in a semiconductor wafer with a new photovoltaic method is described. The resistivity variation can be obtained by measuring the bulk photovoltage and photoconductivity caused by illuminating the semiconductor wafer surface. The authors proposed that the measuring method using the high frequency eddy current in the wafer is useful for the measurement of photoconductivity voltage, and analyzed it theoretically. Consequently, in this method, the resistivity variation can be determined independently of intensity and shape of the illuminated light and thickness of the wafer. For comparison, the resistivity variation of p and n type CZ-Si wafers was measured by both the new photovoltaic method and the four-point probe method, and experimental results of the two methods were in good agreement, with errors within a few per cent. It was confirmed that the resistivity striation of n type FZ-Si wafer can be well measured by this new photovoltaic method.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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