イオンエッチレジスト
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概要
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Ion-etch characteristics of silicone cross-linked by electron beam irradiation are investigated. It is shown that the decreasing rate in thickness of silicone under ion bombardment, measured relative to that of silver, is less than that of photo-sensitive resin, and that ion bombardment under d. c. discharge is preferable to r. f. discharge if silicone is to have a stronger resistive action against ion-etching. Decrease in thickness under d. c. discharge depends on the initial film thickness, and it is found to be about 1/6 of the latter. Although some dependence of the decreasing rate of silicone thickness on the amount of the electron beam irradiation for cross-linking is seen during the early period of ion bombardment, the final decrease in thickness is always about 1/6 of the initial thickness for each of the differently irradiated silicones. It is demonstrated that 0.8μ width fine silver lines are formed by ion-etch with silicone resist cross-linked by an electron beam 0.1μ in diameter.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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