四極スパッタ装置とそのタンタル・シリカおよびアルミナ薄膜作製への応用
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概要
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The basic construction, discharge characteristics and the sputtering rate of a "tetrode sputtering system" are described in detail. Also, experimental results are reported on the electrical and physicochemical properties of tantalum, silica and alumina films deposited in this system. The electrodes of this sputtering system consist of a hot filament cathode, an anode, a target to be sputtered, and a keep-alive electrode, which enables starting of the discharge even below an argon pressure of 1×10-3 torr. By use of a magnetic field which confines the plasma in the space between the target and the oppositting substrate. Tantalum films are sputtered on glass substrates as functions of argon pressure PA and target voltage VT. Silica films and alumina films are deposited by RF sputtering of a fused quartz plate and a ceramic alumina plate, respectively. Infrared absorption spectra and dielectric constant are compared with those of the bulk, and also the frequency dependence of the silica film capacitance is measured.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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