Energy Distribution of Electrons Tunneling through a Metal-Insulator-Metal Sandwich Structure
スポンサーリンク
概要
- 論文の詳細を見る
A study of the energy distribution of electron tunneling through a metal-insulator-metal diode for high voltage cases is presented. The ideal Mott barrier is assumed; the barrier forms including the multiple-image-force effect are calculated exactly as far as possible, and numerical results of the energy distribution are given on the basis of one dimensional and normal energy assumptions. The dependence of the energy distribution on temperature, film thickness, and applied voltage is investigated in detail.<BR>Finally, the difference between the energy distributions given by the numerical results and the experimental results obtained with Al-Al<SUB>2</SUB>O<SUB>3</SUB>-Au thin film cathodes is discussed briefly.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
- Electron Channelling Effect in an Al–Fe–Cu Quasicrystal
- Construction and Performance of a Large-Aperture Wire-Chamber Spectrometer for Pion Scattering Experiments at KEK
- Effect of Plasma Injection on Cold Wall Type MHD Generator
- Development of Scanning μ-RHEED Microscopy for Imaging Polycrystal Grain Structure in LSI
- Boundary Layer Cooling Effect on Semi-Hot Wall Type MHD Channel