A Newly Developed 300 kV Field-Emission Analytical Transmission Electron Microscope
スポンサーリンク
概要
- 論文の詳細を見る
In order to carry out high-spatial-resolution analysis at the nanometer level, a 300 kV analytical transmission electron microscope with a field-emission gun has been developed. Some characteristic features of the new microscope are described and the results of the nanometer-level analysis are shown for silicon nitride and indium iron zinc oxide.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
- Electron Channelling Effect in an Al–Fe–Cu Quasicrystal
- Construction and Performance of a Large-Aperture Wire-Chamber Spectrometer for Pion Scattering Experiments at KEK
- Effect of Plasma Injection on Cold Wall Type MHD Generator
- Development of Scanning μ-RHEED Microscopy for Imaging Polycrystal Grain Structure in LSI
- Boundary Layer Cooling Effect on Semi-Hot Wall Type MHD Channel